An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied

In this paper, we proposed an improved (Indum-Galum-Zinc-Oxide) IGZO-Filler (IF) structure that can be used in a Cell-On-Peri (COP) by improving the excellent erase performance of IGZO-Pillar (IP) structure. The IP mentioned above is announced previous study, and overcomes poor hole carrier characteristics IGZO when channel was early 3D NAND Flash enables operation. showed that, despite very IGZO, operation sufficiently possible even if only few carriers exist thin pillar 5 nm thickness. Simulation results show exhibits fast rate 100 μs, similar to existing structure, while maintaining low leakage current properties inherent material. Therefore, expected maintain COP which erasure overcoming temperature stability problems polysilicon channels.